SOLUTIONS: CONTAMINATION & DEFECT PROCESS CONTROL

Non-contact room temperature photoluminescence imaging (PLi) highlights electrically-active defects located in the device area of the wafer that are otherwise invisible to other inspection and test methods. Full wafer and micro scanning review capabilities enables reliable non-destructive analysis of process integrity or product quality, including metal contamination and crystal defect quantification critical to device performance and yield. Many leading wafer manufacturers employ Nanometrics PL technology for EPI, SiGe and SOI applications. High-volume IC manufacturing has seen increasing adoption with fully automated in-line configurations for monitor as well as patterned product wafers.